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H11C4/H11C5/H11C6
PHOTO SCR OPTOCOUPLER
FEATURES * Turn On Current (IFT), 5.0 mA Typical * Gate Trigger Current (IGT), 20 mA Typical * Surge Anode Current, 5.0 A * Blocking Voltage, 400 V Gate Trigger Voltage (VGT), 0.6 V Typical * Isolation Voltage, 5300 VACRMS * Solid State Reliability * Standard DIP Package * Underwriters Lab File #E52744 DESCRIPTION The H11C4/H11C5/H11C6 are optically coupled SCRs with a Gallium Arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. These optocouplers can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. The H11C4 and H11C5 has a maximum turn-oncurrent of 11 mA. The H11C6 has a maximum of 14 mA. Maximum Ratings Emitter Peak Reverse Voltage .................................... 6.0 V Continuous Forward Current......................... 60 mA Peak Forward Current (1 ms, 1% Duty Cycle) ................................ 3.0 A Power Dissipation at 25C ......................... 100 mW Derate Linearly from 25C ................... 1.33 mW/C Detector Reverse Gate Voltage..................................... 6.0 V Anode Voltage (DC or AC Peak) ................... 400 V RMS Forward Current ................................. 300 mA Surge Anode Current (10 ms duration) .......... 5.0 A Peak Forward Current (100 s, 1% Duty Cycle) .............................. 10 A Surge Gate Current (5 ms duration) ........... 200 mA Power Dissipation, 25C case ................ 1000 mW Derate Linearly from 25C ................... 13.3 mW/C Package Isolation Test Voltage ....................... 5300 VACRMS Between Emitter and Detector Referred to Standard Climate 23C/50%RH, DIN 50014 Creepage.................................................min.7 mm Clearance ...............................................min. 7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1...................... 175 Isolation Resistance VIO=500 V, TA=25C..............................1012 VIO=500 V, TA=100C............................1011 Total Package Dissipation ......................... 400 mW Derate Linearly from 25C ..................... 5.3 mW/C Operating Temperature Range .... -55C to +100C Storage Temperature Range ....... -55C to +150C Lead Soldering Time at 260C ....................10 sec. Package Dimensions in Inches (mm)
Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Gate 5 Anode 4 Cathode
.335 (8.50) .343 (8.70) .039 (1.00) min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
Characteristics (TA=25C)
Emitter Forward Voltage Reverse Current Capacitance Detector Forward Blocking Voltage Reverse Blocking Voltage On-state Voltage Holding Current Gate Trigger Voltage
Forward Leakage Current
Sym Min. Typ. Max. Unit VF IR CO VDM 400 VDM 400
Vt IH
Condition IF=10 mA VR=3 V VR=0, f=1 MHz
RGK=10 K TA=100C Id=150 A
1.2 50
1.5 10
V A pF V V
1.1
1.3 500 1.0
V A V A
VGT IR
0.6
150
Reverse Leakage Current
IR
150
A
Gate Trigger Current IGT Capacitance Anode to Gate Gate to Cathode Package Turn-0n Current H11C4/H11C5 H11C6 Turn-0n Current H11C4/H11C5 H11C6
20
50
A
IT=300 mA RGK=27 K VFX=50 V VFX=100 V RGK=27 K RL=10 K RGK=10 K VRM=400 V IF=0, TA=100C RGK=10 K VRX=400 V IF=0, TA=100C VFX=100 V RGK=27 K, RL=10 K V=0, f=1 MHz
20 350 IFT IFT
pF pF
20 30 5 7 11 14
mA mA mA mA
VDM=50 V RGK=10 K VDM=100 V RGK=27 K
5-55

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